BD751C
Harris Corporation
Harris Corporation
TRANS NPN 130V 20A TO3
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
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Upgrade your electronic designs with the BD751C Bipolar Junction Transistor (BJT) by Harris Corporation. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BD751C is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Harris Corporation for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 130 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 2V
- Power - Max: 250 W
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204
- Supplier Device Package: TO-3
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