BDV64B
onsemi

onsemi
TRANS PNP DARL 100V 10A SOT93
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Optimize your electronic systems with the BDV64B Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BDV64B delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93