BF5030RE6327
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
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Engineered for excellence, the BF5030RE6327 RF MOSFET from Infineon Technologies is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BF5030RE6327's robust construction ensures long-term reliability even in harsh environments. Choose Infineon Technologies's BF5030RE6327 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Active
- Transistor Type: N-Channel
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 3 V
- Current Rating (Amps): 25mA
- Noise Figure: 1.3dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: SOT-143R
- Supplier Device Package: PG-SOT-143R-3D
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