BF517E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 15V 0.025A SOT23
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Enhance your circuit designs with the BF517E6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BF517E6327HTSA1 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Infineon Technologies to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
- Power - Max: 280 mW
- Frequency - Transition: 2.5GHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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