BFG25A/X,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 5V 5GHZ SOT143B
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The BFG25A/X,215 RF Bipolar Junction Transistor (BJT) by NXP USA Inc. is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFG25A/X,215 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NXP USA Inc. for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
- Gain: -
- Power - Max: 32mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
- Current - Collector (Ic) (Max): 6.5mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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