BFP 196R E6501
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 7.5GHZ SOT143-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BFP 196R E6501 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFP 196R E6501 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Infineon Technologies for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 16.5dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
Related Products
Renesas Electronics America Inc
UPA895TS-T3-A
Infineon Technologies
BFR 183W E6327
NXP USA Inc.
BLS3135-10,114
CEL
NE856M02-AZ
CEL
NE46134-T1-AZ
Microsemi Corporation
MRF4427R2
Texas Instruments
LM3046MX/NOPB
Microsemi Corporation
MRF8372G
CEL
2SC4093-A
onsemi