BFP196WH6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFP196WH6327, a cutting-edge RF Bipolar Junction Transistor (BJT) from Infineon Technologies, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BFP196WH6327 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Infineon Technologies for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
Related Products
Microsemi Corporation
1000MA
Microsemi Corporation
MS2311
Microsemi Corporation
MDS800
Microsemi Corporation
TAN15
Microsemi Corporation
MS2562
Infineon Technologies
BFP169WH6740
Microsemi Corporation
MS2244
NXP USA Inc.
MRF6V3090NBR5578
Microsemi Corporation
2315G
Microsemi Corporation