BFP420E6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, X BAND, NPN
$0.15
Available to order
Reference Price (USD)
1+
$0.15000
500+
$0.1485
1000+
$0.147
1500+
$0.1455
2000+
$0.144
2500+
$0.1425
Exquisite packaging
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Enhance your RF designs with the BFP420E6327, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFP420E6327 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Infineon Technologies for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
- Gain: 21dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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