BG3123H6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT363
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Meet the BG3123H6327XTSA1, a state-of-the-art RF MOSFET transistor from Infineon Technologies, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The BG3123H6327XTSA1 combines cutting-edge semiconductor technology with Infineon Technologies's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the BG3123H6327XTSA1 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 25dB
- Voltage - Test: 5 V
- Current Rating (Amps): 25mA, 20mA
- Noise Figure: 1.8dB
- Current - Test: 14 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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