BG3123RH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT363
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The BG3123RH6327XTSA1 by Infineon Technologies is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the BG3123RH6327XTSA1 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, Infineon Technologies's BG3123RH6327XTSA1 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 25dB
- Voltage - Test: 5 V
- Current Rating (Amps): 25mA, 20mA
- Noise Figure: 1.8dB
- Current - Test: 14 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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