BG3130E6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH DUAL 8V SOT-363
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Discover the BG3130E6327HTSA1, a cutting-edge RF MOSFET transistor from Infineon Technologies, engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The BG3130E6327HTSA1 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. Infineon Technologies's commitment to quality ensures that the BG3130E6327HTSA1 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 5 V
- Current Rating (Amps): 25mA
- Noise Figure: 1.3dB
- Current - Test: 14 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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