BG5412KE6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT-363
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Designed for superior RF performance, the BG5412KE6327HTSA1 from Infineon Technologies is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The BG5412KE6327HTSA1 combines Infineon Technologies's advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the BG5412KE6327HTSA1 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 5 V
- Current Rating (Amps): 25mA
- Noise Figure: 1.1dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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