BG5412KH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH DUAL 8V 25MA SOT363
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The BG5412KH6327XTSA1 is a high-efficiency RF MOSFET transistor by Infineon Technologies, part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The BG5412KH6327XTSA1's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With Infineon Technologies's reputation for quality, you can trust the BG5412KH6327XTSA1 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 5 V
- Current Rating (Amps): 25mA
- Noise Figure: 1.1dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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