BLA6H0912-500112
NXP USA Inc.
NXP USA Inc.
BLA6H0912-500 - LDMOS AVIONICS R
$605.64
Available to order
Reference Price (USD)
1+
$605.64000
500+
$599.5836
1000+
$593.5272
1500+
$587.4708
2000+
$581.4144
2500+
$575.358
Exquisite packaging
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Engineered for excellence, the BLA6H0912-500112 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BLA6H0912-500112's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s BLA6H0912-500112 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Not For New Designs
- Transistor Type: LDMOS
- Frequency: 960MHz ~ 1.22GHz
- Gain: 17dB
- Voltage - Test: 50 V
- Current Rating (Amps): 54A
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 450W
- Voltage - Rated: 100 V
- Package / Case: SOT634A
- Supplier Device Package: CDFM2
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