BLC8G27LS-245AVJ
NXP USA Inc.
NXP USA Inc.
TRANS RF 240W 65V LDMOS SOT1251
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Designed for superior RF performance, the BLC8G27LS-245AVJ from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The BLC8G27LS-245AVJ combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the BLC8G27LS-245AVJ for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.69GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 56W
- Voltage - Rated: 65 V
- Package / Case: SOT-1251-2
- Supplier Device Package: 8-DFM
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