BLF10H6600P112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT539 (
$220.03
Available to order
Reference Price (USD)
1+
$220.03000
500+
$217.8297
1000+
$215.6294
1500+
$213.4291
2000+
$211.2288
2500+
$209.0285
Exquisite packaging
Discount
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The BLF10H6600P112 from NXP USA Inc. is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the BLF10H6600P112 is a reliable choice for both commercial and industrial use. Trust NXP USA Inc. to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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