BLF184XR112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR
$521.11
Available to order
Reference Price (USD)
1+
$521.11000
500+
$515.8989
1000+
$510.6878
1500+
$505.4767
2000+
$500.2656
2500+
$495.0545
Exquisite packaging
Discount
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The BLF184XR112 Bipolar Junction Transistor (BJT) by NXP USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BLF184XR112 provides consistent performance in demanding applications. Choose NXP USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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