BLF4G22S-100,112
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ SOT502B
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Discover the BLF4G22S-100,112, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The BLF4G22S-100,112 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the BLF4G22S-100,112 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 13.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 12A
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 25W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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