BLF574XR112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT1214
$178.84
Available to order
Reference Price (USD)
1+
$178.84000
500+
$177.0516
1000+
$175.2632
1500+
$173.4748
2000+
$171.6864
2500+
$169.898
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BLF574XR112 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BLF574XR112 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
2SC3645T-TD-E
onsemi
2SC4412-5-TB-E
Microchip Technology
JAN2N5238S
NXP USA Inc.
PDTC124XE/DG/B2115
Microchip Technology
2N5613
onsemi
2SD1684T
Microchip Technology
JANTXV2N2904
Microchip Technology
JANSF2N2369AUA/TR
Microchip Technology
2C3440
Microchip Technology