BLF574XRS112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT1214
$178.84
Available to order
Reference Price (USD)
1+
$178.84000
500+
$177.0516
1000+
$175.2632
1500+
$173.4748
2000+
$171.6864
2500+
$169.898
Exquisite packaging
Discount
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Upgrade your electronic designs with the BLF574XRS112 Bipolar Junction Transistor (BJT) by NXP USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BLF574XRS112 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NXP USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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