BLF6G15LS-250PBRN112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT1110
$135.09
Available to order
Reference Price (USD)
1+
$135.09000
500+
$133.7391
1000+
$132.3882
1500+
$131.0373
2000+
$129.6864
2500+
$128.3355
Exquisite packaging
Discount
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Optimize your electronic systems with the BLF6G15LS-250PBRN112 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BLF6G15LS-250PBRN112 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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