BLF6G22LS-100,112
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 18.2DB SOT502B
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As a leading solution in the Discrete Semiconductor Products market, the BLF6G22LS-100,112 RF MOSFET from Ampleon USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The BLF6G22LS-100,112's advanced design ensures maximum power transfer with minimal distortion. With Ampleon USA Inc.'s expertise in semiconductor innovation, the BLF6G22LS-100,112 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 29A
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 25W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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