BLF7G10L-250,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$102.56
Available to order
Reference Price (USD)
1+
$102.56000
500+
$101.5344
1000+
$100.5088
1500+
$99.4832
2000+
$98.4576
2500+
$97.432
Exquisite packaging
Discount
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Engineered for excellence, the BLF7G10L-250,112 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BLF7G10L-250,112's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s BLF7G10L-250,112 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 920MHz ~ 960MHz
- Gain: 19.5dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: SOT-502A
- Supplier Device Package: LDMOST
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