BLF888D112
NXP USA Inc.
NXP USA Inc.
UHF POWER LDMOS TRANSISTOR, SOT5
$231.64
Available to order
Reference Price (USD)
1+
$231.64000
500+
$229.3236
1000+
$227.0072
1500+
$224.6908
2000+
$222.3744
2500+
$220.058
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BLF888D112 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BLF888D112 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Nexperia USA Inc.
PBSS4310PAS-QX
Microchip Technology
JAN2N1485
Microchip Technology
2N2221AUA/TR
Microchip Technology
2C5154
Microchip Technology
2N5344
Microchip Technology
2N6128
Microchip Technology
2N3439P
onsemi
2SC536G-SPA-AC
Microchip Technology
JANTXV2N4234L
onsemi