BLF888DU112
NXP USA Inc.
NXP USA Inc.
UHF POWER LDMOS TRANSISTOR, SOT5
$264.95
Available to order
Reference Price (USD)
1+
$264.95000
500+
$262.3005
1000+
$259.651
1500+
$257.0015
2000+
$254.352
2500+
$251.7025
Exquisite packaging
Discount
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Enhance your circuit designs with the BLF888DU112 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BLF888DU112 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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