BLF8G10L-160V,112
NXP USA Inc.
NXP USA Inc.
TRANS RF PWR LDMOS 160W SOT502A
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Discover the BLF8G10L-160V,112, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The BLF8G10L-160V,112 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the BLF8G10L-160V,112 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
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