BLF8G24L-200P,112
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 17.2DB SOT539A
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Designed for superior RF performance, the BLF8G24L-200P,112 from Ampleon USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The BLF8G24L-200P,112 combines Ampleon USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the BLF8G24L-200P,112 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 17.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.74 A
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: SOT-539A
- Supplier Device Package: SOT539A
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