BLF8G24LS-200P,118
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 17.2DB SOT539B
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BLF8G24LS-200P,118, a cutting-edge RF MOSFET transistor from Ampleon USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The BLF8G24LS-200P,118 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. Ampleon USA Inc.'s commitment to quality ensures that the BLF8G24LS-200P,118 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 17.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.74 A
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: SOT-539B
- Supplier Device Package: SOT539B
Related Products
NXP USA Inc.
MRFE6S9130HSR5
Wolfspeed, Inc.
PTFB210801FA-V1-R250
onsemi
BF245A
Ampleon USA Inc.
BLF6G15LS-40RN,112
STMicroelectronics
STAC3932F
NXP USA Inc.
AFT21S140W02GSR3
NXP USA Inc.
BF861B,235
Infineon Technologies
PTVA030121EAV1XWSA1
NXP USA Inc.
MRF6V12250HR3
Ampleon USA Inc.