BLP8G10S-45PJ
NXP USA Inc.
NXP USA Inc.
TRANS LDMOS 45W 4HSOPF
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Discover the BLP8G10S-45PJ, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The BLP8G10S-45PJ is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the BLP8G10S-45PJ meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 952.5MHz ~ 957.5MHz
- Gain: 20.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 224 mA
- Power - Output: 2.5W
- Voltage - Rated: 65 V
- Package / Case: SOT-1223-1
- Supplier Device Package: 4-HSOPF
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