BLS3135-65I
Ampleon USA Inc.
Ampleon USA Inc.
MICROWAVE POWER TRANSISTOR (AMPL
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BLS3135-65I, a cutting-edge RF Bipolar Junction Transistor (BJT) from Ampleon USA Inc., part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BLS3135-65I features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Ampleon USA Inc. for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 75V
- Frequency - Transition: 3.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 200W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-422A
- Supplier Device Package: SOT422A
Related Products
Infineon Technologies
BFP 540F E6327
Infineon Technologies
BFG 235 E6327
CEL
NE94433-T1B
Infineon Technologies
BFP182WE6327HTSA1
NXP USA Inc.
BFG424W,115
Infineon Technologies
BFP650E6327HTSA1
CEL
2SC5338-T1-AZ
Diodes Incorporated
ZTX325
Broadcom Limited
AT-64023
onsemi