BQ4010YMA-150N
Texas Instruments
Texas Instruments
IC NVSRAM 64KBIT PARALLEL 28DIP
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Upgrade your systems with the BQ4010YMA-150N Memory IC from Texas Instruments, a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The BQ4010YMA-150N showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The BQ4010YMA-150N excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The BQ4010YMA-150N is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 150ns
- Access Time: 150 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.61", 15.49mm)
- Supplier Device Package: 28-DIP Module (18.42x37.72)
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