BQ4011YMA-100
Texas Instruments
Texas Instruments
IC NVSRAM 256KBIT PARALLEL 28DIP
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Experience top-tier performance with the BQ4011YMA-100 Memory IC from Texas Instruments, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The BQ4011YMA-100 exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The BQ4011YMA-100 provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The BQ4011YMA-100 is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.61", 15.49mm)
- Supplier Device Package: 28-DIP Module (18.42x37.72)
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