BR25L040FJ-WE2
Rohm Semiconductor
Rohm Semiconductor
IC EEPROM 4KBIT SPI 5MHZ 8SOPJ
$0.91
Available to order
Reference Price (USD)
2,500+
$0.53838
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BR25L040FJ-WE2 Memory IC by Rohm Semiconductor is a high-performance component designed for the Memory category. This IC provides exceptional data storage and retrieval speeds, making it ideal for demanding electronic systems. Its durable design ensures reliable operation in various environments.
Memory ICs, including the BR25L040FJ-WE2, are known for their ability to manage large datasets efficiently. These components are vital for systems that require quick and accurate memory access. The BR25L040FJ-WE2 features advanced technology that enhances speed and reduces power consumption, catering to modern electronic needs.
Applications of the BR25L040FJ-WE2 span across industries such as aerospace, consumer electronics, and industrial automation. For instance, it is used in flight control systems for precise data handling and in smart TVs for seamless streaming. The BR25L040FJ-WE2 is a trusted and high-quality Memory IC for a wide range of applications.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: SPI
- Clock Frequency: 5 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
Related Products
Renesas Electronics America Inc
7132LA25JGI
Renesas Electronics America Inc
70V28L15PFG8
Rohm Semiconductor
BR24L64F-WE2
Rohm Semiconductor
BR24G02NUX-3TTR
Micron Technology Inc.
MT58L256L18F1T-8.5
Winbond Electronics
W979H6KBVX2I TR
GSI Technology Inc.
GS81314LQ36GK-133I
Microchip Technology
93LC56AT-I/ST
Microchip Technology
AT27LV010A-70JU-T
Infineon Technologies