BS2114F-E2
Rohm Semiconductor
Rohm Semiconductor
600V HIGH VOLTAGE HIGH & LOW-SID
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BS2114F-E2 from Rohm Semiconductor redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the BS2114F-E2 enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Obsolete
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.6V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 30ns, 30ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
Related Products
Microchip Technology
MCP14E4-E/SL
Texas Instruments
LM2724M
Infineon Technologies
IR22381QPBF
Renesas Electronics America Inc
ISL6615CBZ-T
IXYS
IXDI414SI
Intersil
HIP4083AP
Infineon Technologies
IRS2607DSPBF
Texas Instruments
SN75372PG4
Intersil
ISL6605IRZ
Microchip Technology