BSC014N03LSGATMA1
Infineon Technologies
Infineon Technologies
BSC014N03 - 12V-300V N-CHANNEL P
$0.00
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Reference Price (USD)
5,000+
$0.68585
10,000+
$0.66007
Exquisite packaging
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Enhance your electronic projects with the BSC014N03LSGATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSC014N03LSGATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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