BSC014N06NSSCATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 261A WSON-8
$4.11
Available to order
Reference Price (USD)
1+
$4.11000
500+
$4.0689
1000+
$4.0278
1500+
$3.9867
2000+
$3.9456
2500+
$3.9045
Exquisite packaging
Discount
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The BSC014N06NSSCATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSC014N06NSSCATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 261A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-WSON-8-2
- Package / Case: 8-PowerWDFN
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