BSC019N02KSGAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 30A/100A TDSON
$1.39
Available to order
Reference Price (USD)
5,000+
$0.99657
Exquisite packaging
Discount
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The BSC019N02KSGAUMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's BSC019N02KSGAUMA1 for their critical applications.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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