BSC019N06NSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 100A TDSON-8 FL
$2.85
Available to order
Reference Price (USD)
5,000+
$1.14551
10,000+
$1.10707
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the BSC019N06NSATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSC019N06NSATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 74µA
- Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 136W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STU5N60M2
onsemi
NTD5C648NLT4G
Infineon Technologies
IRF4905LPBF
Vishay Siliconix
SI7880ADP-T1-GE3
Sanken
2SK3004
STMicroelectronics
STP7NK40Z
Renesas Electronics America Inc
2SK1402A-E
onsemi
NDF04N60ZG
onsemi
FQU5N40TU
Infineon Technologies