Shopping cart

Subtotal: $0.00

BSC022N03SG

Infineon Technologies
BSC022N03SG Preview
Infineon Technologies
MOSFET N-CH 30V 28A/100A TDSON
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN

Related Products

Toshiba Semiconductor and Storage

2SK2376(Q)

Renesas Electronics America Inc

HAT3008RJ-EL

Infineon Technologies

BSS205NL6327HTSA1

Vishay Siliconix

IRLD024

Infineon Technologies

BSS159NH6327XTSA1

Vishay Siliconix

SI7382DP-T1-GE3

Alpha & Omega Semiconductor Inc.

AON6426

Vishay Siliconix

IRFZ14S

Top