BSC028N06NSSCATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 100A TDSON
$2.96
Available to order
Reference Price (USD)
1+
$2.96000
500+
$2.9304
1000+
$2.9008
1500+
$2.8712
2000+
$2.8416
2500+
$2.812
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC028N06NSSCATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSC028N06NSSCATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTMFS4C10NBT1G
onsemi
FDMC86324
Infineon Technologies
IPP65R125C7
Rohm Semiconductor
R6009END3TL1
Rohm Semiconductor
RCX120N25
Fairchild Semiconductor
FDU6682_NL
Taiwan Semiconductor Corporation
TSM1N80CW RPG
Rohm Semiconductor
SCT4026DEC11
STMicroelectronics
STD18N60M6
Diodes Incorporated