BSC040N10NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
$3.38
Available to order
Reference Price (USD)
5,000+
$1.07250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the BSC040N10NS5ATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSC040N10NS5ATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
SPA15N60CFDXKSA1
onsemi
NVGS5120PT1G
Diodes Incorporated
DMTH8012LK3Q-13
Renesas Electronics America Inc
UPA2724UT1A-E2-AY
onsemi
FDP8874
Infineon Technologies
SPD03N60S5
Toshiba Semiconductor and Storage
TPC8125,LQ(S
Texas Instruments
CSD18534Q5A
STMicroelectronics
STP5NK80ZFP
onsemi