BSC090N03MSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 12A/48A 8TDSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.26923
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the BSC090N03MSGATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSC090N03MSGATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
IRFU120
Vishay Siliconix
SI1067X-T1-E3
Infineon Technologies
IRF7484TRPBF
Infineon Technologies
SPU30N03S2-08
IXYS
IXTY15N20T
Diodes Incorporated
ZVN4306ASTOB
Alpha & Omega Semiconductor Inc.
AON6232
Infineon Technologies
IPD14N06S280ATMA1
onsemi
FDV303N_NB9U008
Infineon Technologies