BSC0923NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 17A/32A TISON8
$1.71
Available to order
Reference Price (USD)
5,000+
$0.50474
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance BSC0923NDIATMA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the BSC0923NDIATMA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 32A
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
Related Products
onsemi
FDMD8240LET40
Alpha & Omega Semiconductor Inc.
AO4813
Sanyo
CPH6413-TLD-E
Panjit International Inc.
PJX8872B_R1_00001
Vishay Siliconix
SIB912DK-T1-GE3
Diodes Incorporated
DMN3190LDWQ-13
Advanced Linear Devices Inc.
ALD210800SCL
Vishay Siliconix
SISF00DN-T1-GE3
Texas Instruments
CSD87503Q3ET
Diodes Incorporated