BSC205N10LS G
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 7.4A/45A TDSON
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC205N10LS G by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 43µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
IXYS
IXFH24N50
Rohm Semiconductor
R5205CNDTL
onsemi
FCPF600N60ZL1
onsemi
NTTFS4937NTWG
IXYS
IXFY5N50P3
Infineon Technologies
BSP320S E6327
Toshiba Semiconductor and Storage
2SK3309(Q)
STMicroelectronics
STF13N95K3
STMicroelectronics
STP200NF04
Infineon Technologies