BSC670N25NSFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 250V 24A TDSON-8-1
$3.99
Available to order
Reference Price (USD)
5,000+
$1.41985
Exquisite packaging
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Enhance your electronic projects with the BSC670N25NSFDATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSC670N25NSFDATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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