Shopping cart

Subtotal: $0.00

BSD214SN L6327

Infineon Technologies
BSD214SN L6327 Preview
Infineon Technologies
MOSFET N-CH 20V 1.5A SOT363-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT363-PO
  • Package / Case: 6-VSSOP, SC-88, SOT-363

Related Products

Infineon Technologies

IRFR3504ZTRRPBF

STMicroelectronics

STU11NM60ND

Infineon Technologies

BSS84PW

Vishay Siliconix

IRFZ44L

Infineon Technologies

IRLR3103TR

Diodes Incorporated

ZVP2120ASTZ

Infineon Technologies

IRF7202TR

Infineon Technologies

IRF8306MTR1PBF

Infineon Technologies

IRF7422D2TR

STMicroelectronics

STF25NM60N

Top