BSH103,235
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 850MA TO236AB
$0.12
Available to order
Reference Price (USD)
10,000+
$0.11070
30,000+
$0.10278
50,000+
$0.09948
100,000+
$0.09900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BSH103,235 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSH103,235 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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