BSH105,235
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.05A TO236AB
$0.10
Available to order
Reference Price (USD)
1+
$0.09570
500+
$0.094743
1000+
$0.093786
1500+
$0.092829
2000+
$0.091872
2500+
$0.090915
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSH105,235 single MOSFET from Nexperia USA Inc. is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the BSH105,235 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Sanyo
NDF05N50ZH
Vishay Siliconix
SIR862DP-T1-GE3
Vishay Siliconix
IRFR1N60ATRPBF-BE3
Vishay Siliconix
IRF9Z34STRRPBF
Rohm Semiconductor
R6535ENZ4C13
Fairchild Semiconductor
FQP2N80
Infineon Technologies
IPI040N06N3GXKSA1
Infineon Technologies
AUIRFR8403TRL
onsemi
NTMFS4841NT1G
Rohm Semiconductor