BSH111BKR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 55V 210MA TO236AB
$0.30
Available to order
Reference Price (USD)
3,000+
$0.05922
6,000+
$0.05219
15,000+
$0.04516
30,000+
$0.04281
75,000+
$0.04047
150,000+
$0.03578
Exquisite packaging
Discount
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The BSH111BKR from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s BSH111BKR for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 302mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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