BSL211SP
Infineon Technologies
Infineon Technologies
MOSFET P-CH 20V 4.7A TSOP-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSL211SP from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSL211SP offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSOP6-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Fairchild Semiconductor
HUF76129S3ST
Infineon Technologies
IPW60R0706P
Infineon Technologies
64-2105PBF
Toshiba Semiconductor and Storage
2SK3906(Q)
Fairchild Semiconductor
IRFS150A
IXYS
IXTA180N085T7
Vishay Siliconix
SI1300BDL-T1-E3
GeneSiC Semiconductor
GA50JT17-247
Alpha & Omega Semiconductor Inc.
AON1605_001
Infineon Technologies